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- 2023
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Mark
gm/Id Analysis of vertical nanowire III–V TFETs
- Contribution to journal › Article
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Mark
Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
- Contribution to journal › Article
-
Mark
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
- Contribution to journal › Article
-
Mark
Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
- Contribution to journal › Article
-
Mark
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
(2023) 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 In IEEE International Integrated Reliability Workshop Final Report
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2022
-
Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
- Contribution to journal › Article
-
Mark
The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties
- Contribution to journal › Article
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Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
- Contribution to journal › Article
-
Mark
A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
