Publications | Lund University Publications

31 – 40 of 57

show: 10
|
sort: year (new to old)

News feed Embed this list Save this search Mark all Export

Cancel

Embed this list

copy and paste the html snippet below into your own page:

<iframe src="https://lup.lub.lu.se/search/publication?embed=1&q=author+exact+%22va4841da%22&amp;hide_pagination=1&amp;hide_info=1&amp;hide_options=1"
  width="100%"
  height="400"
  allowtransparency="true"
  frameborder="0">
</iframe>

2023
Mark Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
Gribisch, Philipp ^LU ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2023) In IEEE Transactions on Electron Devices 70(8). p.4101-4107
- Contribution to journal › Article
Mark Low Al-content n-type Al_xGa_1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
Stanishev, Vallery ; Armakavicius, Nerijus ; Gogova, Daniela ; Nawaz, Muhammad ; Rorsman, Niklas ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Vacuum 217.
- Contribution to journal › Article
Mark Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
Gribisch, Philipp ^LU ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2023) In IEEE Transactions on Electron Devices 70(5). p.2408-2414
- Contribution to journal › Article
Mark Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
Papamichail, A. ; Persson, A. R. ^LU ; Richter, S. ^LU ; Kühne, P. ^LU ; Stanishev, V. ; Persson, P. O.Å. ^LU ; Ferrand-Drake Del Castillo, R. ; Thorsell, M. ; Hjelmgren, H. and Paskov, P. P. , et al. (2023) In Applied Physics Letters 122(15).
- Contribution to journal › Article
Mark High-quality N-polar GaN optimization by multi-step temperature growth process
Zhang, Hengfang ; Chen Jr., Tai ; Papamichail, Alexis ; Persson, Ingemar ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Journal of Crystal Growth 603.
- Contribution to journal › Article
Mark Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
Zhang, Hengfang ; Persson, Ingemar ; Chen Jr., Tai ; Papamichail, Alexis ; Tran, Dat Q. ; Persson, Per O. Å. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Crystal Growth and Design 23(2). p.1049-1056
- Contribution to journal › Article
Mark Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
Persson, Axel R. ; Gustafsson, Anders ^LU ; Bi, Zhaoxia ^LU ; Samuelson, Lars ^LU ; Darakchieva, Vanya ^LU and Persson, Per O.Å. (2023) In Applied Physics Letters 123(2).
- Contribution to journal › Article
2022
Mark Epitaxial growth of β -Ga 2 O 3 by hot-wall MOCVD
Gogova, Daniela ; Ghezellou, Misagh ; Tran, Dat Q. ; Richter, Steffen ^LU ; Papamichail, Alexis ; Hassan, Jawad Ul ; Persson, Axel R. ^LU ; Persson, Per O. Å. ; Kordina, Olof and Monemar, Bo ^LU , et al. (2022) In AIP Advances 12(5).
- Contribution to journal › Article
Mark Mg-doping and free-hole properties of hot-wall MOCVD GaN
Papamichail, A. ; Kakanakova-Georgieva, A. ; Sveinbjörnsson, E. ; Persson, A. R. ; Hult, B. ; Rorsman, N. ; Stanishev, V. ; Le, S. P. ; Persson, P. O.Å. and Nawaz, M. , et al. (2022) In Journal of Applied Physics 131(18).
- Contribution to journal › Article
Mark Linear strain and stress potential parameters for the three fundamental band to band transitions in β-Ga₂O₃
Korlacki, R. ; Knudtson, J. ; Stokey, M. ; Hilfiker, M. ; Darakchieva, V. ^LU and Schubert, M. (2022) In Applied Physics Letters 120(4).
- Contribution to journal › Article

your query:: Remove author: va4841da