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- 2023
-
Mark
Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
(
- Contribution to journal › Article
-
Mark
Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
(
- Contribution to journal › Article
-
Mark
Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts
(
- Contribution to journal › Article
-
Mark
High Current Density Vertical Nanowire TFETs With I₆₀ > 1
μ
A/
μ
m
(
- Contribution to journal › Article
-
Mark
Sensing single domains and individual defects in scaled ferroelectrics
(
- Contribution to journal › Article
-
Mark
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
2023) 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 In IEEE International Integrated Reliability Workshop Final Report(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High-k/InGaAs interface defects at cryogenic temperature
(
- Contribution to journal › Article
- 2022
-
Mark
The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties
(
- Contribution to journal › Article
-
Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
(
- Contribution to journal › Article
-
Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
(
- Contribution to journal › Article