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- 2017
-
Mark
Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
2017) Compound Semiconductor Week 2017(
- Contribution to conference › Paper, not in proceeding
-
Mark
Properties of III-V nanowires : MOSFETs and TunnelFETs
2017) 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 p.99-100(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
First InGaAs lateral nanowire MOSFET RF noise measurements and model
2017) 75th Annual Device Research Conference, DRC 2017(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Record performance for junctionless transistors in InGaAs MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
2017) In IEEE Electron Device Letters(
- Contribution to journal › Letter
-
Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
- 2016
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
(
- Contribution to journal › Letter
-
Mark
Autonomy in PhD-education – Supervising for Independence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
(
- Contribution to journal › Letter