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2017
Mark First InGaAs lateral nanowire MOSFET RF noise measurements and model
Ohlsson, Lars ^LU ; Lindelow, Fredrik ^LU ; Zota, Cezar B. ^LU ; Ohlrogge, Matthias ; Merkle, Thomas ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 75th Annual Device Research Conference, DRC 2017
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Record performance for junctionless transistors in InGaAs MOSFETs
Zota, Cezar B. ^LU ; Borg, Mattias ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 p.34-35
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with I_on = 330 μa/μm at I_off = 100 nA/μm and V_D = 0.5 v
Kilpi, Olli Pekka ^LU ; Wu, Jun ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 p.36-37
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
Kilpi, Olli Pekka ^LU ; Svensson, Johannes ^LU ; Wu, Jun ^LU ; Persson, Axel R. ^LU ; Wallenberg, Reine ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2017) In Nano Letters 17(10). p.6006-6010
- Contribution to journal › Article
Mark Junctionless tri-gate InGaAs MOSFETs
Zota, Cezar B. ^LU ; Borg, Mattias ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) In Japanese Journal of Applied Physics 56(12).
- Contribution to journal › Article
Mark The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
Schenk, A. ; Sant, S. ; Moselund, K. ; Riel, H. ; Memisevic, E. ^LU and Wernersson, L. E. ^LU (2017) 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 2017-September. p.273-276
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Berg, Martin ; Kilpi, Olli-Pekka ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Electron Device Letters
- Contribution to journal › Letter
Mark InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Transactions on Electron Devices 64(11). p.4746-4751
- Contribution to journal › Article
2016
Mark Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Hellenbrand, Markus ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) In IEEE Electron Device Letters 37(5). p.549-552
- Contribution to journal › Letter
Mark Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
Berg, Martin ^LU ; Kilpi, Olli-Pekka ^LU ; Persson, Karl-Magnus ^LU ; Svensson, Johannes ^LU ; Hellenbrand, Markus ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) In IEEE Electron Device Letters 37(8). p.966-969
- Contribution to journal › Letter

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