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- 2022
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Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
(
- Contribution to journal › Article
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Mark
Oxygen relocation during HfO2 ALD on InAs
(
- Contribution to journal › Article
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Mark
Template-Assisted Selective Epitaxy of InAs on W
2022) 2022 Compound Semiconductor Week, CSW 2022(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties
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- Contribution to journal › Article
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Mark
InGaAs Nanowire and Quantum Well Devices
2022)(
- Thesis › Doctoral thesis (compilation)
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Mark
Advantages of binary stochastic synapses for hardware spiking neural networks with realistic memristors
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- Contribution to journal › Article
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Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
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- Contribution to journal › Article
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Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
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- Contribution to journal › Article
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Mark
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
(
- Contribution to journal › Article
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Mark
Strained Inx Ga(1-x )As/InP near surface quantum wells and MOSFETs
(
- Contribution to journal › Article