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2021
Mark Improved quality of InSb-on-insulator microstructures by flash annealing into melt
Menon, Heera ^LU ; Södergren, Lasse ^LU ; Athle, Robin ^LU ; Johansson, Jonas ^LU ; Steer, Matthew ; Thayne, Iain and Borg, Mattias ^LU (2021) In Nanotechnology 32(16).
- Contribution to journal › Article
Mark Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO₂ RRAM via TiN bottom electrode and interface engineering
Yong, Zhihua ^LU ; Persson, Karl-Magnus ^LU ; Mamidala, Saketh, Ram ^LU ; D Acunto, Giulio ^LU ; Liu, Yi ^LU ; Benter, Sandra ^LU ; Pan, Jisheng ; Li, Zheshen ; Borg, Mattias ^LU and Mikkelsen, Anders ^LU , et al. (2021) In Applied Surface Science 551.
- Contribution to journal › Article
Mark High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
Mamidala, Saketh, Ram ^LU ; Persson, Karl-Magnus ^LU ; Irish, Austin ^LU ; Jönsson, Adam ^LU ; Timm, Rainer ^LU and Wernersson, Lars-Erik ^LU (2021) In Nature Electronics p.914-914
- Contribution to journal › Article
Mark Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation
Andric, Stefan ^LU ; Ohlsson-Fhager, Lars ^LU and Wernersson, Lars Erik ^LU (2021) 15th European Microwave Integrated Circuits Conference, EuMIC 2020 In EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference p.85-88
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf_1-xZr_xO₂
Athle, Robin ^LU ; Persson, Anton E.O. ^LU ; Irish, Austin ^LU ; Menon, Heera ^LU ; Timm, Rainer ^LU and Borg, Mattias ^LU (2021) In ACS applied materials & interfaces 13(9). p.11089-11095
- Contribution to journal › Article
Mark Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
Jönsson, Adam ^LU ; Svensson, Johannes ^LU ; Fiordaliso, Elisabetta Maria ; Lind, Erik ^LU ; Hellenbrand, Markus ^LU and Wernersson, Lars Erik ^LU (2021) In ACS Applied Electronic Materials 3(12). p.5240-5247
- Contribution to journal › Article
Mark Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>10⁶) Low Voltage ITO/HfO₂ RRAMs for Future 3D Integration
Mamidala, Saketh, Ram ^LU ; Persson, Karl-Magnus ^LU and Wernersson, Lars-Erik ^LU (2021) 2021 Device Research Conference (DRC)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2) : Raman spectroscopy and magnetic properties
Kúkoľová, A. ; Dimitrievska, M. ; Litvinchuk, A. P. ; Ramanandan, S. P. ; Tappy, N. ; Menon, H. ^LU ; Borg, M. ^LU ; Grundler, D. and Fontcuberta i Morral, A. (2021) In CrystEngComm 23(37). p.6506-6517
- Contribution to journal › Article
Mark Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
Jönsson, Adam ^LU (2021)
- Thesis › Doctoral thesis (compilation)
Mark Capacitance Scaling in In_0.71Ga_0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
Garigapati, Navya S. ^LU ; Lindelow, Fredrik ^LU ; Sodergren, Lasse ^LU and Lind, Erik ^LU (2021) In IEEE Transactions on Electron Devices 68(8). p.3762-3767
- Contribution to journal › Article

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