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- 2014
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Mark
High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices
(
- Contribution to journal › Article
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Mark
Straight and kinked InAs nanowire growth observed in situ by transmission electron microscopy
(
- Contribution to journal › Article
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Mark
Vertical III-V nanowire device integration on Si(100)
(
- Contribution to journal › Article
- 2013
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Mark
A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
(
- Contribution to journal › Article
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Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
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Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
1/f-noise in Vertical InAs Nanowire Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
(
- Contribution to journal › Article
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Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
(
- Contribution to journal › Article
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Mark
Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
(
- Contribution to journal › Article