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- 2017
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
-
Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
(
- Contribution to journal › Article
-
Mark
1/f and RTS noise in InGaAs nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55(
- Contribution to journal › Article
-
Mark
1/f and RTS Noise in InGaAs Nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
- 2016
-
Mark
Vertical III-V/High-k Nanowire MOS Capacitors and Transistors
2016) In Lund University Faculty of Medicine Doctoral Dissertation Series(
- Thesis › Doctoral thesis (monograph)
-
Mark
High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
(
- Contribution to journal › Article
-
Mark
Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric
(
- Contribution to journal › Article
- 2015
-
Mark
Structural Properties of Wurtzite InP-InGaAs Nanowire Core-Shell Heterostructures
(
- Contribution to journal › Article
-
Mark
Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
(
- Contribution to journal › Article
- 2014
-
Mark
RF and DC Analysis of Stressed InGaAs MOSFETs
(
- Contribution to specialist publication or newspaper › Specialist publication article