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- 2024
-
Mark
III-V Devices for Emerging Electronic Applications
2024)(
- Thesis › Doctoral thesis (compilation)
- 2023
-
Mark
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
2023) 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 In IEEE International Integrated Reliability Workshop Final Report(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Geometrical Magnetoresistance as a Tool for Carrier Mobility Extraction in InGaAs MOSFETs
(
- Contribution to journal › Article
-
Mark
Low temperature atomic hydrogen annealing of InGaAs MOSFETs
(
- Contribution to journal › Article
-
Mark
Cryogenic Characteristics of InGaAs MOSFET
(
- Contribution to journal › Article
- 2022
-
Mark
InGaAs Nanowire and Quantum Well Devices
2022)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires
(
- Contribution to journal › Article
-
Mark
Simulating Vapor-Liquid-Solid Growth of Au-Seeded InGaAs Nanowires
(
- Contribution to journal › Article
-
Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
(
- Contribution to journal › Article
-
Mark
Low-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing
(
- Contribution to journal › Article
-
Mark
Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
(
- Contribution to journal › Article
- 2021
-
Mark
Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
2021)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Optimization of Near-Surface Quantum Well Processing
(
- Contribution to journal › Article
-
Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(
- Contribution to journal › Article
- 2020
-
Mark
III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
(
- Contribution to journal › Article
-
Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
- 2019
-
Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowire MOSFETs
2019) In Series of licentiate and doctoral theses(
- Thesis › Doctoral thesis (compilation)
-
Mark
Low-complexity III-V circuitry for millimeter wave communication and radar
2019) 2019 IEEE Globecom Workshops, GC Wkshps 2019 In 2019 IEEE Globecom Workshops, GC Wkshps 2019 - Proceedings(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2018
-
Mark
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
(
- Contribution to journal › Article
- 2017
-
Mark
1/f and RTS Noise in InGaAs Nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
-
Mark
1/f and RTS noise in InGaAs nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55(
- Contribution to journal › Article
-
Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
(
- Contribution to journal › Article
- 2016
-
Mark
Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric
(
- Contribution to journal › Article
-
Mark
High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
(
- Contribution to journal › Article
-
Mark
Vertical III-V/High-k Nanowire MOS Capacitors and Transistors
2016) In Lund University Faculty of Medicine Doctoral Dissertation Series(
- Thesis › Doctoral thesis (monograph)
- 2015
-
Mark
Structural Properties of Wurtzite InP-InGaAs Nanowire Core-Shell Heterostructures
(
- Contribution to journal › Article
-
Mark
Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
(
- Contribution to journal › Article
- 2014
-
Mark
RF and DC Analysis of Stressed InGaAs MOSFETs
(
- Contribution to specialist publication or newspaper › Specialist publication article
-
Mark
In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
(
- Contribution to journal › Article
-
Mark
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
(
- Contribution to journal › Article
- 2013
-
Mark
A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
(
- Contribution to journal › Article
-
Mark
RF reliability of gate last InGaAs nMOSFETs with high-k dielectric
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2012
-
Mark
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(
- Contribution to journal › Article
-
Mark
In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
(
- Contribution to journal › Article
- 2008
-
Mark
Electron transport study of a lateral InGaAs quantum dot
(
- Contribution to journal › Article