Bo Monemar (Former)
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- 2022
-
Mark
Epitaxial growth of
β
-Ga
2
O
3
by hot-wall MOCVD
(
- Contribution to journal › Article
-
Mark
Thermal conductivity of AlxGa1−xN (0≤x≤1) epitaxial layers
(
- Contribution to journal › Article
- 2020
-
Mark
Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device-Quality GaN Templates
(
- Contribution to journal › Article
-
Mark
Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs
(
- Contribution to journal › Article
- 2019
-
Mark
InGaN Platelets : Synthesis and Applications toward Green and Red Light-Emitting Diodes
2019) In Nano Letters(
- Contribution to journal › Article
-
Mark
Synthesis and Applications of III-V Nanowires
(
- Contribution to journal › Scientific review
- 2018
-
Mark
Self-assembled InN quantum dots on side facets of GaN nanowires
(
- Contribution to journal › Article
-
Mark
High In-content InGaN nano-pyramids : Tuning crystal homogeneity by optimized nucleation of GaN seeds
(
- Contribution to journal › Article
- 2017
-
Mark
Optical properties of III-nitride semiconductors
2017) p.87-116(
- Chapter in Book/Report/Conference proceeding › Book chapter
- 2016
-
Mark
Nanowire-Based Visible Light Emitters, Present Status and Outlook
(
- Chapter in Book/Report/Conference proceeding › Book chapter
- 2015
-
Mark
Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence
(
- Contribution to journal › Article
- 2014
-
Mark
Selectively grown III-N μ-substrates for defect reduction and lattice matching
2014) 17th International Conference on Metalorganic Vapor Phase Epitaxy, 2014(
- Contribution to conference › Abstract
-
Mark
InN Quantum Dots on GaN Nanowires Grown by MOVPE
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
-
Mark
Electrical Characterization of Nanowire-Based Modular and Defect Free GaN µ-Substrate
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
-
Mark
InN quantum dots on GaN nanowires grown by MOVPE
2014) 10th International Conference on Nitride Semiconductors (ICNS) In physica status solidi (c) 11. p.421-424(
- Contribution to journal › Article
- 2013
-
Mark
A luminescence study of doping effects in InP-based radial nanowire structures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Spatially resolved Hall effect measurements in core-shell InP nanowires
2013) Lund-Tokyo-Copenhagen-Beijing Joint Workhop on Quantum Devices(
- Contribution to conference › Abstract
- 2012
-
Mark
Spatially resolved Hall effect measurement in a single semiconductor nanowire
(
- Contribution to journal › Article
-
Mark
A novel platform enabling spatially resolved electro-optical mapping of NW facets
2012) ICPS 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
(
- Contribution to journal › Article
-
Mark
Dependence of Resonance Energy Transfer on Exciton Dimensionality
(
- Contribution to journal › Article
-
Mark
Nucleation and initial stages of growth of GaN nanowires for LEDs by selective-area MOVPE
2011) 9th Int. Conf. on Nitride Semiconductors(
- Contribution to conference › Paper, not in proceeding
- 2009
-
Mark
Evidence for Two Mg Related Acceptors in GaN
(
- Contribution to journal › Article
-
Mark
Identification of the gallium vacancy-oxygen pair defect in GaN
(
- Contribution to journal › Article