Nano Electronics
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- 2021
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Mark
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
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- Contribution to journal › Article
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Mark
Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
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- Contribution to journal › Article
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Mark
Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2) : Raman spectroscopy and magnetic properties
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- Contribution to journal › Article
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Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
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- Contribution to journal › Article
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Mark
Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation
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- Contribution to journal › Article
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Mark
Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
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- Contribution to journal › Article
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Mark
Millimeter-Wave Vertical III-V Nanowire MOSFET Device-To-Circuit Co-Design
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- Contribution to journal › Article
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Mark
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
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- Contribution to journal › Article
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Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
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- Contribution to journal › Article
- 2020
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Mark
III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
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- Contribution to journal › Article