Nano Electronics
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- 2020
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Mark
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
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- Contribution to journal › Article
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Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices
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- Contribution to journal › Article
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Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving Smin= 32 mV/dec and gm/ID= 100 V-1
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
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- Contribution to journal › Article
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Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
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- Contribution to journal › Article
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Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
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- Contribution to journal › Article
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Weyl Semi-Metal-Based High-Frequency Amplifiers
2020) 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 In Technical Digest - International Electron Devices Meeting, IEDM 2019-December.(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
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- Contribution to journal › Article
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Compressively-strained GaSb nanowires with core-shell heterostructures
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- Contribution to journal › Article
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Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth
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- Contribution to journal › Article