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2018
Mark Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) In Nanotechnology 29(43).
- Contribution to journal › Article
Mark Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth
Löfstrand, Anette ^LU ; Graczyk, Mariusz ^LU ; Suyatin, Dmitry ^LU ; Kvennefors, Anders ^LU ; Maximov, Ivan ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2018) 4-th International Symposium on DSA, November 11-13, 2018, Sapporo, Japan
- Contribution to conference › Abstract
Mark InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
Troian, Andrea ^LU ; Knutsson, Johan V. ^LU ; McKibbin, Sarah R. ^LU ; Yngman, Sofie ^LU ; Babadi, Aein S. ^LU ; Wernersson, Lars Erik ^LU ; Mikkelsen, Anders ^LU and Timm, Rainer ^LU (2018) In AIP Advances 8(12).
- Contribution to journal › Article
Mark Clutter analysis in a time-domain millimeter-wave reflectometry setup
Heunisch, Sebastian ^LU ; Ohlsson, Lars ^LU and Wernersson, Lars Erik ^LU (2018) 12th European Conference on Antennas and Propagation, EuCAP 2018
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Capacitance Measurements in Vertical III-V Nanowire TFETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.943-946
- Contribution to journal › Letter
Mark RF Characterisation of Vertical III-V Nanowire Tunnel FETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) Swedish Microwave Days 2018
- Contribution to conference › Paper, not in proceeding
Mark Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.1089-1091
- Contribution to journal › Article
Mark Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si
Kilpi, Olli Pekka ^LU ; Svensson, Johannes ^LU and Wernersson, Lars Erik ^LU (2018) 63rd IEEE International Electron Devices Meeting, IEDM 2017 Part F134366. p.1-17
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Fabrication of Tunnel Field-Effect Transistors
Krishnaraja, Abinaya ^LU ; Memisevic, Elvedin ^LU ; Hellenbrand, Markus ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) Swedish Microwave Days 2018
- Contribution to conference › Paper, not in proceeding
Mark Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) 76th Device Research Conference p.137-138
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding