Johannes Svensson

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2022
Mark Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
Löfstrand, Anette ^LU ; Jafari Jam, Reza ^LU ; Svensson, Johannes ^LU ; Jönsson, Adam ^LU ; Menon, Heera ^LU ; Jacobsson, Daniel ; Wernersson, Lars-Erik ^LU and Maximov, Ivan ^LU (2022) In Advanced Electronic Materials 8(9).
- Contribution to journal › Article
Mark Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
Zhu, Zhongyunshen ^LU ; Jönsson, Adam ^LU ; Liu, Yen Po ^LU ; Svensson, Johannes ^LU ; Timm, Rainer ^LU and Wernersson, Lars Erik ^LU (2022) In ACS Applied Electronic Materials 4(1). p.531-538
- Contribution to journal › Article
Mark Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
Zhu, Zhongyunshen ^LU ; Svensson, Johannes ^LU ; Jönsson, Adam ^LU and Wernersson, Lars Erik ^LU (2022) In Nanotechnology 33(7).
- Contribution to journal › Article
Mark Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
Mamidala, Saketh, Ram ^LU ; Svensson, Johannes ^LU ; Skog, Sebastian ; Johannesson, Sofie and Wernersson, Lars-Erik ^LU (2022) In IEEE Electron Device Letters 43(12). p.2033-2033
- Contribution to journal › Article
2021
Mark Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
Kilpi, Olli Pekka ^LU ; Andric, Stefan ^LU ; Svensson, Johannes ^LU ; Ram, Mamidala Saketh ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2021) In IEEE Electron Device Letters 42(11). p.1596-1598
- Contribution to journal › Article
Mark Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
Jönsson, Adam ^LU ; Svensson, Johannes ^LU ; Fiordaliso, Elisabetta Maria ; Lind, Erik ^LU ; Hellenbrand, Markus ^LU and Wernersson, Lars Erik ^LU (2021) In ACS Applied Electronic Materials 3(12). p.5240-5247
- Contribution to journal › Article
2020
Mark Vertical nanowire III–V MOSFETs with improved high-frequency gain
Kilpi, Olli-Pekka ^LU ; Hellenbrand, Markus ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2020) In Electronics Letters 56(13). p.669-671
- Contribution to journal › Article
Mark Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
Krishnaraja, Abinaya ^LU ; Svensson, Johannes ^LU ; Memisevic, Elvedin ^LU ; Zhu, Zhongyunshen ^LU ; Persson, Axel R. ^LU ; Lind, Erik ^LU ; Wallenberg, Lars Reine ^LU and Wernersson, Lars Erik ^LU (2020) In ACS Applied Electronic Materials 2(9). p.2882-2887
- Contribution to journal › Article
Mark Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving S_min= 32 mV/dec and g_m/I_D= 100 V^-1
Krishnaraja, Abinaya ^LU ; Svensson, Johannes ^LU and Wernersson, Lars Erik ^LU (2020) 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 p.17-18
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
Jönsson, Adam ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2020) In IEEE Transactions on Electron Devices 67(10). p.4118-4122
- Contribution to journal › Article

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