Johannes Svensson

11 – 20 of 86

show: 10
|
sort: year (new to old)

News feed Embed this list Save this search Mark all Export

Cancel

Embed this list

copy and paste the html snippet below into your own page:

<iframe src="https://lup.lub.lu.se/search/person/4d54647d-6568-4289-8e08-884b9706f46b?embed=1&amp;hide_pagination=1&amp;hide_info=1&amp;hide_options=1"
  width="100%"
  height="400"
  allowtransparency="true"
  frameborder="0">
</iframe>

« previous
1
2
3
4
5
…
9
next »

2022
Mark Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
Löfstrand, Anette ^LU ; Jafari Jam, Reza ^LU ; Svensson, Johannes ^LU ; Jönsson, Adam ^LU ; Menon, Heera ^LU ; Jacobsson, Daniel ; Wernersson, Lars-Erik ^LU and Maximov, Ivan ^LU (2022) In Advanced Electronic Materials 8(9).
- Contribution to journal › Article
Mark Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
Zhu, Zhongyunshen ^LU ; Jönsson, Adam ^LU ; Liu, Yen Po ^LU ; Svensson, Johannes ^LU ; Timm, Rainer ^LU and Wernersson, Lars Erik ^LU (2022) In ACS Applied Electronic Materials 4(1). p.531-538
- Contribution to journal › Article
Mark Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
Andric, Stefan ^LU ; Kilpi, Olli-Pekka ^LU ; Mamidala, Saketh, Ram ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2022) In IEEE Transactions on Electron Devices 69(6). p.3055-3055
- Contribution to journal › Article
Mark Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
Zhu, Zhongyunshen ^LU ; Svensson, Johannes ^LU ; Jönsson, Adam ^LU and Wernersson, Lars Erik ^LU (2022) In Nanotechnology 33(7).
- Contribution to journal › Article
2021
Mark Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
Kilpi, Olli Pekka ^LU ; Andric, Stefan ^LU ; Svensson, Johannes ^LU ; Ram, Mamidala Saketh ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2021) In IEEE Electron Device Letters 42(11). p.1596-1598
- Contribution to journal › Article
Mark Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
Jönsson, Adam ^LU ; Svensson, Johannes ^LU ; Fiordaliso, Elisabetta Maria ; Lind, Erik ^LU ; Hellenbrand, Markus ^LU and Wernersson, Lars Erik ^LU (2021) In ACS Applied Electronic Materials 3(12). p.5240-5247
- Contribution to journal › Article
2020
Mark Vertical nanowire III–V MOSFETs with improved high-frequency gain
Kilpi, Olli-Pekka ^LU ; Hellenbrand, Markus ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2020) In Electronics Letters 56(13). p.669-671
- Contribution to journal › Article
Mark Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
Krishnaraja, Abinaya ^LU ; Svensson, Johannes ^LU ; Memisevic, Elvedin ^LU ; Zhu, Zhongyunshen ^LU ; Persson, Axel R. ^LU ; Lind, Erik ^LU ; Wallenberg, Lars Reine ^LU and Wernersson, Lars Erik ^LU (2020) In ACS Applied Electronic Materials 2(9). p.2882-2887
- Contribution to journal › Article
Mark Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth
Löfstrand, Anette ^LU ; Svensson, Johannes ^LU ; Wernersson, Lars Erik ^LU and Maximov, Ivan ^LU (2020) In Nanotechnology 31(32).
- Contribution to journal › Article
Mark Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving S_min= 32 mV/dec and g_m/I_D= 100 V^-1
Krishnaraja, Abinaya ^LU ; Svensson, Johannes ^LU and Wernersson, Lars Erik ^LU (2020) 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 p.17-18
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding

« previous
1
2
3
4
5
…
9
next »