Claes Thelander
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- 2011
-
Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
- Contribution to journal › Article
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Mark
GaSb nanowire single-hole transistor
- Contribution to journal › Article
-
Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
- Contribution to journal › Article
-
Mark
Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
- Contribution to journal › Article
-
Mark
Dual-gate induced InP nanowire diode
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
- Contribution to journal › Article
-
Mark
15 nm diameter InAs nanowire MOSFETs
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
- Contribution to journal › Article
-
Mark
Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Inverter circuits based on vertical InAs nanowire MOSFETs
(2011) Swedish System-on-Chip Conference, SSoCC 2011
- Contribution to conference › Paper, not in proceeding
