Daniel Madsen
51 – 60 of 63
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=""
width=""
height=""
allowtransparency="true"
frameborder="0">
</iframe>
- 2014
-
Mark
Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
- Contribution to journal › Article
- 2013
-
Mark
Structural investigation of GaInP nanowires using X-ray diffraction
- Contribution to journal › Article
-
Mark
Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
- Contribution to journal › Article
-
Mark
Direct Imaging of Atomic Scale Structure and Electronic Properties of GaAs Wurtzite and Zinc Blende Nanowire Surfaces.
- Contribution to journal › Article
-
Mark
Zincblende-to-wurtzite interface improvement by group III loading in Au-seeded GaAs nanowires
- Contribution to journal › Article
-
Mark
A General Approach for Sharp Crystal Phase Switching in InAs, GaAs, InP, and GaP Nanowires Using Only Group V Flow.
- Contribution to journal › Article
-
Mark
Magnetic Polarons and Large Negative Magnetoresistance in GaAs Nanowires Implanted with Mn Ions.
- Contribution to journal › Article
- 2012
-
Mark
Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures
- Contribution to journal › Article
-
Mark
Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point
- Contribution to journal › Article
-
Mark
High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires
- Contribution to journal › Article
