Lars-Erik Wernersson

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2020
Mark Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
Persson, Anton E.O. ^LU ; Athle, Robin ^LU ; Littow, Pontus ; Persson, Karl Magnus ^LU ; Svensson, Johannes ^LU ; Borg, Mattias ^LU and Wernersson, Lars Erik ^LU (2020) In Applied Physics Letters 116(6).
- Contribution to journal › Article
Mark Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth
Löfstrand, Anette ^LU ; Svensson, Johannes ^LU ; Wernersson, Lars Erik ^LU and Maximov, Ivan ^LU (2020) In Nanotechnology 31(32).
- Contribution to journal › Article
Mark Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
Saeidi, Ali ; Rosca, Teodor ; Memisevic, Elvedin ^LU ; Stolichnov, Igor ; Cavalieri, Matteo ; Wernersson, Lars Erik ^LU and Ionescu, Adrian M. (2020) In Nano Letters 20(5). p.3255-3262
- Contribution to journal › Article
Mark A method for estimating defects in ferroelectric thin film MOSCAPs
Persson, Anton E. O. ^LU ; Atle, Robin ^LU ; Svensson, Johannes ^LU ; Borg, Mattias ^LU and Wernersson, Lars-Erik ^LU (2020) In Applied Physics Letters 117(24).
- Contribution to journal › Article
Mark III-V Nanowire MOSFETs : RF-Properties and Applications
Wernersson, Lars Erik ^LU (2020) 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
Mamidala, Saketh, Ram ^LU ; Persson, Karl-Magnus ^LU ; Borg, Mattias ^LU and Wernersson, Lars-Erik ^LU (2020) In IEEE Electron Device Letters 41(9). p.1432-1435
- Contribution to journal › Article
Mark Compressively-strained GaSb nanowires with core-shell heterostructures
Zhu, Zhongyunshen ^LU ; Svensson, Johannes ^LU ; Persson, Axel R. ^LU ; Wallenberg, Reine ^LU ; Gromov, Andrei V. and Wernersson, Lars Erik ^LU (2020) In Nano Research 13(9). p.2517-2524
- Contribution to journal › Article
Mark Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
Krishnaraja, Abinaya ^LU ; Svensson, Johannes ^LU ; Memisevic, Elvedin ^LU ; Zhu, Zhongyunshen ^LU ; Persson, Axel R. ^LU ; Lind, Erik ^LU ; Wallenberg, Lars Reine ^LU and Wernersson, Lars Erik ^LU (2020) In ACS Applied Electronic Materials 2(9). p.2882-2887
- Contribution to journal › Article
Mark Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving S_min= 32 mV/dec and g_m/I_D= 100 V^-1
Krishnaraja, Abinaya ^LU ; Svensson, Johannes ^LU and Wernersson, Lars Erik ^LU (2020) 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 p.17-18
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
Jönsson, Adam ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2020) In IEEE Transactions on Electron Devices 67(10). p.4118-4122
- Contribution to journal › Article

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