Lars-Erik Wernersson
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- 2017
-
Mark
Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
2017) Compound Semiconductor Week 2017(
- Contribution to conference › Paper, not in proceeding
-
Mark
Junctionless tri-gate InGaAs MOSFETs
(
- Contribution to journal › Article
-
Mark
The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
2017) 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 2017-September. p.273-276(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
- 2016
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article
-
Mark
Ballistic modeling of InAs nanowire transistors
(
- Contribution to journal › Article
-
Mark
Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.
(
- Contribution to journal › Article
-
Mark
InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v
2016) 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs nanowire GAA n-MOSFETs with 12-15 nm diameter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding