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- 2014
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Mark
In situ etching for control over axial and radial III-V nanowire growth rates using HBr.
(
- Contribution to journal › Article
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Mark
Absorption of light in InP nanowire arrays
(
- Contribution to journal › Article
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Mark
Correlated Luminescence and Hall Measurements on Single Nanowires
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
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Mark
Semiconductor nanostructures enabled by aerosol technology
(
- Contribution to journal › Scientific review
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Mark
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
(
- Contribution to journal › Article
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Mark
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
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Mark
InN quantum dots on GaN nanowires grown by MOVPE
2014) 10th International Conference on Nitride Semiconductors (ICNS) In physica status solidi (c) 11. p.421-424(
- Contribution to journal › Article
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Mark
Bulk-like transverse electron mobility in an array of heavily n-doped InP nanowires probed by terahertz spectroscopy
(
- Contribution to journal › Article
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Mark
Study of photocurrent generation in InP nanowire-based p(+)-i-n(+) photodetectors
(
- Contribution to journal › Article
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Mark
InN Quantum Dots on GaN Nanowires Grown by MOVPE
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
- 2013
-
Mark
Solid-liquid-vapor metal-catalyzed etching of lateral and vertical nanopores.
(
- Contribution to journal › Article
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Mark
Photoluminescence study of Zn-doped wurtzite InP core-shell nanowires
(
- Contribution to journal › Article
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Mark
Optical Far-Field Method with Subwavelength Accuracy for the Determination of Nanostructure Dimensions in Large-Area Samples.
(
- Contribution to journal › Article
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Mark
Transparently Wrap-Gated Semiconductor Nanowire Arrays For Studies Of Gate-Controlled Photoluminescence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Reflection measurements to reveal the absorption in nanowire arrays
(
- Contribution to journal › Article
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Mark
Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires.
(
- Contribution to journal › Article
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Mark
Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.
(
- Contribution to journal › Article
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Mark
Fluorescent Nanowire Heterostructures as a Versatile Tool for Biology Applications
(
- Contribution to journal › Article
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Mark
Semiconductor-Oxide Heterostructured Nanowires Using Postgrowth Oxidation.
(
- Contribution to journal › Article
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Mark
A luminescence study of doping effects in InP-based radial nanowire structures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Large-energy-shift photon upconversion in degenerately doped InP nanowires by direct excitation into the electron gas
(
- Contribution to journal › Article
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Mark
Structural investigation of GaInP nanowires using X-ray diffraction
(
- Contribution to journal › Article
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Mark
Current−Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope
(
- Contribution to journal › Article
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Mark
InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit.
(
- Contribution to journal › Article
- 2012
-
Mark
Nanowires with promise for solar energy harvesting
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Electron Trapping in InP Nanowire FETs with Stacking Faults.
(
- Contribution to journal › Article
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Mark
Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.
(
- Contribution to journal › Article
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Mark
Radial InAs quantum structures grown on side-facets of InP nanowires
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
2012) GigaHertz Symposium 2012(
- Contribution to conference › Paper, not in proceeding
-
Mark
Electron transport in Mn+ implanted GaAs nanowires
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
High-Performance InAs Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
A comparative study of nanowire-based infrared p+-i-n+ photodetectors
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures
(
- Contribution to journal › Article
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Mark
Surface Chemistry, Structure, and Electronic Properties from Microns to the Atomic Scale of Axially Doped Semiconductor Nanowires.
2012) In ACS Nano(
- Contribution to journal › Article
-
Mark
Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors.
(
- Contribution to journal › Article
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Mark
Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point
(
- Contribution to journal › Article
-
Mark
GaInP Nanowire p-i-n Junctions with Electroluminescence at 569 nm near the Direct to Indirect Bandgap Crossover
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
Doping of semiconductor nanowires
(
- Contribution to journal › Scientific review
-
Mark
Dynamics of extremely anisotropic etching of InP nanowires by HCl
(
- Contribution to journal › Article
-
Mark
Electron Image Series Reconstruction of Twin Interfaces in InP Superlattice Nanowires.
(
- Contribution to journal › Article
-
Mark
Growth of doped InAsyP1-y nanowires with InP shells
(
- Contribution to journal › Article
-
Mark
Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction
(
- Contribution to journal › Article
-
Mark
InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
(
- Contribution to journal › Article
-
Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
15 nm diameter InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate
(
- Contribution to journal › Article
-
Mark
Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal Limit.
(
- Contribution to journal › Article
-
Mark
Photovoltaics with piezoelectric core-shell nanowires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Dual-gate induced InP nanowire diode
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Fabrication and characterization of AlP-GaP core-shell nanowires
(
- Contribution to journal › Article