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- 2022
-
Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
Persson, Anton E. O. LU
; Zhu, Zhongyunshen
LU
; Athle, Robin
LU
and Wernersson, Lars-Erik
LU
(2022)
In IEEE Electron Device Letters
43(6).
p.854-857
- Contribution to journal › Article
-
Mark
Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
Andric, Stefan LU ; Lindelow, Fredrik LU ; Fhager, Lars Ohlsson LU
; Lind, Erik
LU
and Wernersson, Lars Erik
LU
(2022)
In IEEE Transactions on Microwave Theory and Techniques
70(2).
p.1284-1291
- Contribution to journal › Article
-
Mark
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
Mamidala, Saketh, Ram LU
; Svensson, Johannes
LU
; Skog, Sebastian
; Johannesson, Sofie
and Wernersson, Lars-Erik
LU
(2022)
In IEEE Electron Device Letters
43(12).
p.2033-2033
- Contribution to journal › Article
-
Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
Löfstrand, Anette LU ; Jafari Jam, Reza LU ; Svensson, Johannes LU ; Jönsson, Adam LU ; Menon, Heera LU ; Jacobsson, Daniel ; Wernersson, Lars-Erik LU and Maximov, Ivan LU
(2022)
In Advanced Electronic Materials
8(9).
- Contribution to journal › Article
-
Mark
Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
Zhu, Zhongyunshen LU
; Svensson, Johannes
LU
; Jönsson, Adam
LU
and Wernersson, Lars Erik
LU
(2022)
In Nanotechnology
33(7).
- Contribution to journal › Article
-
Mark
As-deposited ferroelectric HZO on a III–V semiconductor
Andersen, André LU ; Persson, Anton E. O. LU
and Wernersson, Lars-erik
LU
(2022)
In Applied Physics Letters
121(1).
p.012901-012901
- Contribution to journal › Article
- 2021
-
Mark
Millimeter-Wave Vertical III-V Nanowire MOSFET Device-To-Circuit Co-Design
Andric, Stefan LU ; Ohlsson Fhager, Lars LU
and Wernersson, Lars Erik
LU
(2021)
In IEEE Transactions on Nanotechnology
20.
p.434-440
- Contribution to journal › Article
-
Mark
Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration
Mamidala, Saketh, Ram LU
; Persson, Karl-Magnus
LU
and Wernersson, Lars-Erik
LU
(2021)
2021 Device Research Conference (DRC)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation
Persson, Karl-Magnus LU ; Mamidala, Saketh, Ram LU
and Wernersson, Lars-Erik
LU
(2021)
In IEEE Journal of the Electron Devices Society
9.
p.564-569
- Contribution to journal › Article
-
Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
Kilpi, Olli Pekka LU ; Andric, Stefan LU ; Svensson, Johannes LU ; Ram, Mamidala Saketh LU
; Lind, Erik
LU
and Wernersson, Lars Erik
LU
(2021)
In IEEE Electron Device Letters
42(11).
p.1596-1598
- Contribution to journal › Article