221 – 230 of 351
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2011
-
Mark
Impulse-based 4 Gbit/s radio link at 60 GHz
(
- Contribution to journal › Article
-
Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
(
- Contribution to journal › Article
-
Mark
60 GHz impulse radio measurements
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Design of RF Properties for Vertical Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article
-
Mark
15 nm diameter InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
(
- Contribution to journal › Article
-
Mark
GaSb nanowire single-hole transistor
(
- Contribution to journal › Article
-
Mark
Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
(
- Contribution to journal › Article
-
Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article