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- 2017
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Mark
Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
- Contribution to journal › Article
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Mark
X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire
- Contribution to journal › Article
-
Mark
Carrier Recombination Processes in Gallium Indium Phosphide Nanowires
- Contribution to journal › Article
-
Mark
Parallel-Coupled Quantum Dots in InAs Nanowires
- Contribution to journal › Article
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
- Contribution to journal › Article
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
(2017) In Nano Letters
- Contribution to journal › Letter
-
Mark
Atomic Scale Characterization of III-V Nanowire Surfaces
(2017)
- Thesis › Doctoral thesis (compilation)
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Mark
Electronic Structure Changes Due to Crystal Phase Switching at the Atomic Scale Limit
- Contribution to journal › Article
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Mark
Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction
- Contribution to journal › Article
-
Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
- Contribution to journal › Article
