Nano Electronics
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- 2025
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Mark
Gate Layout and Process Reliability Co-Optimization in High-Speed Vertical III–V Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor Technology
- Contribution to journal › Article
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Mark
Interface Characterization of Plasma-Treated InAs Electrodes for Resistive Random-Access Memories Using Capacitance–Voltage Methods
- Contribution to journal › Article
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Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
- Contribution to journal › Article
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Mark
Simulating Scaling Effects in Fully Vertical GaN FinFETs
- Contribution to journal › Article
- 2024
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Mark
III-V MOSFETs for RF Applications
(2024) 2024 IEEE International Electron Devices Meeting, IEDM 2024
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Cryogenic Evaluation of Resistive Random Access Memory With Enhanced Endurance at 14 K
(2024) In IEEE Transactions on Electron Devices
- Contribution to journal › Article
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Mark
Characteristic Modes and Nonreciprocity
(2024) 2024 IEEE International Symposium on Antennas and Propagation and INC/USNCURSI Radio Science Meeting, AP-S/INC-USNC-URSI 2024 In IEEE Antennas and Propagation Society, AP-S International Symposium (Digest) p.269-270
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
III-V heterostructure tunnel field-effect transistor operation at different temperature regimes
- Contribution to journal › Article
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Mark
Demonstrating reconfigurability in water-based electromagnetic devices using a 3D-printed siphon
- Contribution to journal › Article
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Mark
A 29.5 GHz Rectifier with 14.5 dB Dynamic Power Range for Energy Harvester Using Vertical Nanowire Tunnel FETs
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
