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2011
Mark Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
Nilsson, Henrik ^LU ; Caroff, Philippe ^LU ; Lind, Erik ^LU ; Pistol, Mats-Erik ^LU ; Thelander, Claes ^LU and Wernersson, Lars-Erik ^LU (2011) In Journal of Applied Physics 110(6).
- Contribution to journal › Article
Mark GaSb nanowire single-hole transistor
Ganjipour, Bahram ^LU ; Nilsson, Henrik ^LU ; Borg, Mattias ^LU ; Wernersson, Lars-Erik ^LU ; Samuelson, Lars ^LU ; Xu, Hongqi ^LU and Thelander, Claes ^LU (2011) In Applied Physics Letters 99(26).
- Contribution to journal › Article
Mark Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
Timm, Rainer ^LU ; Hjort, Martin ^LU ; Fian, Alexander ; Borg, Mattias ^LU ; Thelander, Claes ^LU ; Andersen, Jesper N ^LU ; Wernersson, Lars-Erik ^LU and Mikkelsen, Anders ^LU (2011) In Applied Physics Letters 99(22). p.1-222907
- Contribution to journal › Article
Mark Transient studies on InAs/HfO2 nanowire capacitors
Astromskas, Gvidas ^LU ; Storm, Kristian ^LU and Wernersson, Lars-Erik ^LU (2011) In Applied Physics Letters 98(1).
- Contribution to journal › Article
Mark Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
Borg, Mattias ^LU ; Dick Thelander, Kimberly ^LU ; Eymery, Joel and Wernersson, Lars-Erik ^LU (2011) In Applied Physics Letters 98(11).
- Contribution to journal › Article
Mark Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
Borg, Mattias ^LU ; Ek, Martin ^LU ; Dick Thelander, Kimberly ^LU ; Ganjipour, Bahram ^LU ; Dey, Anil ^LU ; Thelander, Claes ^LU and Wernersson, Lars-Erik ^LU (2011) In Applied Physics Letters 99.
- Contribution to journal › Article
Mark Schottky barriers in carbon nanotube-metal contacts
Svensson, Johannes ^LU and Campbell, Eleanor E. B. (2011) In Applied Physics Reviews 110(11).
- Contribution to journal › Article
Mark Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
Astromskas, Gvidas ^LU ; Storm, Kristian ^LU ; Caroff, Philippe ^LU ; Borgström, Magnus ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark 15 nm diameter InAs nanowire MOSFETs
Dey, Anil ^LU ; Thelander, Claes ^LU ; Borgström, Magnus ^LU ; Borg, Mattias ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) Device Research Conference (DRC), 2011 69th Annual p.21-22
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
Ek, Martin ^LU ; Borg, Mattias ^LU ; Dey, Anil ^LU ; Ganjipour, Bahram ^LU ; Thelander, Claes ^LU ; Wernersson, Lars-Erik ^LU and Dick Thelander, Kimberly ^LU (2011) In Crystal Growth & Design 11(10). p.4588-4593
- Contribution to journal › Article

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