Nano Electronics
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- 2018
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Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
(
- Contribution to journal › Article
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Mark
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
(
- Contribution to journal › Article
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Mark
Reflection of Coherent Millimeter-Wave Wavelets on Dispersive Materials : A Study on Porcine Skin
(
- Contribution to journal › Article
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Mark
Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth
2018) 4-th International Symposium on DSA, November 11-13, 2018, Sapporo, Japan(
- Contribution to conference › Abstract
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Mark
Clutter analysis in a time-domain millimeter-wave reflectometry setup
2018) 12th European Conference on Antennas and Propagation, EuCAP 2018(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
(
- Contribution to journal › Article
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Mark
CMOS Integration Based on All-III-V Materials
2018) Swedish Microwave Days 2018(
- Contribution to conference › Abstract
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Mark
Vertical, High-Performance 12 nm diameter InAs Nanowire MOSFETs on Si using an all III-V CMOS process
2018) Compound Semiconductor Week 2018(
- Contribution to conference › Abstract
- 2017
-
Mark
Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
2017) Compound Semiconductor Week 2017(
- Contribution to conference › Paper, not in proceeding
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Mark
Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
2017) p.38-41(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding