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- 2019
-
Mark
Pulsed Millimeter Wave Radar for Hand Gesture Sensing and Classification
Fhager, Lars Ohlsson LU
; Heunisch, Sebastian
LU
; Dahlberg, Hannes
; Evertsson, Anton
and Wernersson, Lars Erik
LU
(2019)
In IEEE Sensors Letters
3(12).
- Contribution to journal › Letter
-
Mark
Core-shell tfet developments and tfet limitations
(2019) 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
Krishnaraja, Abinaya LU ; Svensson, Johannes LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2019)
In Applied Physics Letters
115(14).
- Contribution to journal › Article
-
Mark
Fabrication of Tunnel FETs demonstrating sub-thermal subthreshold slope
Krishnaraja, Abinaya LU ; Svensson, Johannes LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2019)
21th International Vacuum Congress
- Contribution to conference › Abstract
- 2018
-
Mark
CMOS Integration Based on All-III-V Materials
(2018) Swedish Microwave Days 2018
- Contribution to conference › Abstract
-
Mark
Vertical, High-Performance 12 nm diameter InAs Nanowire MOSFETs on Si using an all III-V CMOS process
(2018) Compound Semiconductor Week 2018
- Contribution to conference › Abstract
-
Mark
InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
Troian, Andrea LU ; Knutsson, Johan V. LU ; McKibbin, Sarah R. LU
; Yngman, Sofie
LU
; Babadi, Aein S.
LU
; Wernersson, Lars Erik
LU
; Mikkelsen, Anders
LU
and Timm, Rainer
LU
(2018)
In AIP Advances
8(12).
- Contribution to journal › Article
-
Mark
RF Characterisation of Vertical III-V Nanowire Tunnel FETs
Hellenbrand, Markus LU ; Memisevic, Elvedin LU ; Svensson, Johannes LU ; Krishnaraja, Abinaya LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2018)
Swedish Microwave Days 2018
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
Memisevic, Elvedin LU ; Svensson, Johannes LU ; Lind, Erik LU
and Wernersson, Lars Erik
LU
(2018)
In IEEE Electron Device Letters
39(7).
p.1089-1091
- Contribution to journal › Article
-
Mark
Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding