Nano Electronics
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- 2018
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Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
(
- Contribution to journal › Article
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Mark
Reflection of Coherent Millimeter-Wave Wavelets on Dispersive Materials : A Study on Porcine Skin
(
- Contribution to journal › Article
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Mark
Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Codesign of Compact III-V Millimeter-Wave Wavelet Transmitters with On-Chip Antennas
(
- Contribution to journal › Article
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Mark
InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
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- Contribution to journal › Article
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Mark
CMOS Integration Based on All-III-V Materials
2018) Swedish Microwave Days 2018(
- Contribution to conference › Abstract
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Mark
Vertical, High-Performance 12 nm diameter InAs Nanowire MOSFETs on Si using an all III-V CMOS process
2018) Compound Semiconductor Week 2018(
- Contribution to conference › Abstract
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Mark
Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth
2018) 4-th International Symposium on DSA, November 11-13, 2018, Sapporo, Japan(
- Contribution to conference › Abstract
- 2017
-
Mark
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
(
- Contribution to journal › Letter
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Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article