Nano Electronics
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- 2022
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Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
- Contribution to journal › Article
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Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
- Contribution to journal › Article
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Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
(2022) In Applied Surface Science
- Contribution to journal › Article
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Mark
Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
- Contribution to journal › Article
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Strained Inx Ga(1-x )As/InP near surface quantum wells and MOSFETs
- Contribution to journal › Article
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Mark
Advantages of binary stochastic synapses for hardware spiking neural networks with realistic memristors
- Contribution to journal › Article
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Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
- Contribution to journal › Article
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Oxygen relocation during HfO2 ALD on InAs
- Contribution to journal › Article
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Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
- Contribution to journal › Article
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Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
- Contribution to journal › Article
