Nano Electronics
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- 2022
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Mark
The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties
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- Contribution to journal › Article
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Advantages of binary stochastic synapses for hardware spiking neural networks with realistic memristors
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- Contribution to journal › Article
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Mark
Template-Assisted Selective Epitaxy of InAs on W
2022) 2022 Compound Semiconductor Week, CSW 2022(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Oxygen relocation during HfO2 ALD on InAs
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- Contribution to journal › Article
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Mark
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
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- Contribution to journal › Article
- 2021
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Mark
Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation
2021) 15th European Microwave Integrated Circuits Conference, EuMIC 2020 In EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference p.85-88(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Improved quality of InSb-on-insulator microstructures by flash annealing into melt
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- Contribution to journal › Article
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Mark
Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration
2021) 2021 Device Research Conference (DRC)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
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- Contribution to journal › Article
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Mark
Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
2021)(
- Thesis › Doctoral thesis (compilation)