Nano Electronics
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- 2021
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Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
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- Contribution to journal › Article
- 2020
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Mark
A phase-correlated duo-binary waveform generation technique for millimeter-wave radar pulses
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- Contribution to journal › Article
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Mark
Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving Smin= 32 mV/dec and gm/ID= 100 V-1
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
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- Contribution to journal › Article
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Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
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- Contribution to journal › Article
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Mark
Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
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- Contribution to journal › Article
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Mark
Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
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- Contribution to journal › Article
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Vertical nanowire III–V MOSFETs with improved high-frequency gain
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- Contribution to journal › Article
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Mark
Electrical Characterisation of III-V Nanowire MOSFETs
2020) In Series of Licentiate and Doctoral Theses(
- Thesis › Doctoral thesis (compilation)
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Mark
Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires
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- Contribution to journal › Article