Nano Electronics
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- 2020
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Electrical Characterisation of III-V Nanowire MOSFETs
2020) In Series of Licentiate and Doctoral Theses(
- Thesis › Doctoral thesis (compilation)
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Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
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- Contribution to journal › Article
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III-V Nanowires for High-Speed Electronics
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- Thesis › Doctoral thesis (compilation)
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Weyl Semi-Metal-Based High-Frequency Amplifiers
2020) 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 In Technical Digest - International Electron Devices Meeting, IEDM 2019-December.(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
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- Contribution to journal › Article
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High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
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- Contribution to journal › Article
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Compressively-strained GaSb nanowires with core-shell heterostructures
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- Contribution to journal › Article
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Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studies
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- Contribution to journal › Article
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Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
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- Contribution to journal › Article
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Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires
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- Contribution to journal › Article