Erik Lind
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- 2014
-
Mark
InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
- Contribution to journal › Article
-
Mark
Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
- Contribution to journal › Article
-
Mark
Modeling of n-InAs metal oxide semiconductor capacitors with high-kappa gate dielectric
- Contribution to journal › Article
- 2013
-
Mark
Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
- Contribution to journal › Article
-
Mark
Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
- Contribution to journal › Article
-
Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
- Contribution to journal › Article
-
Mark
A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
- Contribution to journal › Article
-
Mark
1/f-noise in Vertical InAs Nanowire Transistors
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Characterization of Border Traps in III-V MOSFETs Using an RF Transconductance Method
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
