Erik Lind
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- 2014
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Mark
Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors
(
- Contribution to journal › Article
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Mark
InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
(
- Contribution to journal › Article
- 2013
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Mark
A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
(
- Contribution to journal › Article
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Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
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Mark
Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
(
- Contribution to journal › Article
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Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
Characterization of Border Traps in III-V MOSFETs Using an RF Transconductance Method
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
1/f-noise in Vertical InAs Nanowire Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
GaSb nanowire pFETs for III-V CMOS
2013) 71th Annual Device Research Conference (DRC) In IEEE Device Research Conference. Proceedings p.13-14(
- Contribution to journal › Published meeting abstract