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- 2020
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Mark
Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
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- Contribution to journal › Article
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Mark
Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
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- Contribution to journal › Article
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Compressively-strained GaSb nanowires with core-shell heterostructures
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- Contribution to journal › Article
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Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires
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- Contribution to journal › Article
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Mark
Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
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- Contribution to journal › Article
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Mark
Vertical nanowire III–V MOSFETs with improved high-frequency gain
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- Contribution to journal › Article
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Mark
A method for estimating defects in ferroelectric thin film MOSCAPs
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- Contribution to journal › Article
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Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
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- Contribution to journal › Article
- 2019
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Mark
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
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- Contribution to journal › Article
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Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article