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- 2017
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Mark
Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
(
- Contribution to journal › Article
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Mark
Dynamical Tuning of Nanowire Lasing Spectra
(
- Contribution to journal › Article
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Mark
Atomic Scale Characterization of III-V Nanowire Surfaces
2017)(
- Thesis › Doctoral thesis (compilation)
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Mark
Electronic Structure Changes Due to Crystal Phase Switching at the Atomic Scale Limit
(
- Contribution to journal › Article
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Mark
Parallel-Coupled Quantum Dots in InAs Nanowires
(
- Contribution to journal › Article
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Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
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Mark
Conduction Band Offset and Polarization Effects in InAs Nanowire Polytype Junctions
(
- Contribution to journal › Article
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Mark
Simplifying Nanowire Hall Effect Characterization by Using a Three-Probe Device Design
(
- Contribution to journal › Article
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Mark
InxGa1-xP Nanowire Growth Dynamics Strongly Affected by Doping Using Diethylzinc
(
- Contribution to journal › Article
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Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
(
- Contribution to journal › Article
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Mark
X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire
(
- Contribution to journal › Article
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Mark
Vertical III-V Nanowire Tunnel Field-Effect Transistor
2017)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Growth of wurtzite AlxGa1-xP nanowire shells and characterization by Raman spectroscopy
(
- Contribution to journal › Article
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Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
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Mark
Growth and optical properties of InxGa1−xP nanowires synthesized by selective-area epitaxy
(
- Contribution to journal › Article
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Mark
Towards high efficiency nanowire solar cells
(
- Contribution to journal › Article
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Mark
Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction
(
- Contribution to journal › Article
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Mark
Carrier Recombination Processes in Gallium Indium Phosphide Nanowires
(
- Contribution to journal › Article
- 2016
-
Mark
Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire
(
- Contribution to journal › Article
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article