Nano Electronics
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- 2017
-
Mark
III-V MOSFETs for High-Frequency and Digital Applications
(2017)
- Thesis › Doctoral thesis (compilation)
-
Mark
Vertical III-V Nanowire Tunnel Field-Effect Transistor
(2017)
- Thesis › Doctoral thesis (compilation)
-
Mark
Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
(2017) Compound Semiconductor Week 2017
- Contribution to conference › Paper, not in proceeding
-
Mark
Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
(2017) p.38-41
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
- Contribution to journal › Article
-
Mark
Junctionless tri-gate InGaAs MOSFETs
- Contribution to journal › Article
-
Mark
The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
(2017) 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 2017-September. p.273-276
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
- Contribution to journal › Letter
- 2016
-
Mark
Autonomy in PhD-education – Supervising for Independence
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
- Contribution to journal › Letter
