Nano Electronics
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- 2023
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Mark
Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
(
- Contribution to journal › Article
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Mark
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
(
- Contribution to journal › Article
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Mark
Infrared Photodetectors based on InSb and InAs Nanostructures via Heterogeneous Integration-Rapid Melt Growth and Template Assisted Selective Epitaxy
2023)(
- Thesis › Doctoral thesis (compilation)
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Mark
Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
(
- Contribution to journal › Article
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Mark
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
2023) 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 In IEEE International Integrated Reliability Workshop Final Report(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing
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- Contribution to journal › Article
- 2022
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Mark
Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
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- Contribution to journal › Article
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Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
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- Contribution to journal › Article
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Mark
Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
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- Contribution to journal › Article
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Mark
Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
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- Contribution to journal › Article