Nano Electronics
11 – 20 of 163
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=""
width=""
height=""
allowtransparency="true"
frameborder="0">
</iframe>
- 2024
-
Mark
III-V heterostructure tunnel field-effect transistor operation at different temperature regimes
Krishnaraja, Abinaya LU ; Zhu, Zhongyunshen LU
; Svensson, Johannes
LU
and Wernersson, Lars Erik
LU
(2024)
In Applied Physics Letters
125(19).
- Contribution to journal › Article
-
Mark
Demonstrating reconfigurability in water-based electromagnetic devices using a 3D-printed siphon
- Contribution to journal › Article
-
Mark
III-V MOSFETs for RF Applications
Lind, E. LU
and Garigapati, N. S.
LU
(2024)
2024 IEEE International Electron Devices Meeting, IEDM 2024
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
Logotheti, Adamantia LU
; Garigapati, Navya Sri
LU
; So, Byeongchan
LU
; Colvin, Jovana
LU
; Darakchieva, Vanya
LU
and Lind, Erik
LU
(2024)
In Physica Status Solidi. A: Applications and Materials Science
- Contribution to journal › Article
-
Mark
RF Characterization of Ferroelectric MOS Capacitors
Persson, Anton E.O. LU
; Andric, Stefan
LU
; Fhager, Lars
LU
and Wernersson, Lars Erik
LU
(2024)
In IEEE Electron Device Letters
45(9).
p.1653-1656
- Contribution to journal › Article
-
Mark
Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor
Zhu, Zhongyunshen LU
; Persson, Anton E.O.
LU
and Wernersson, Lars Erik
LU
(2024)
In ACS Nano
18(42).
p.28977-28985
- Contribution to journal › Article
-
Mark
Cryogenic Evaluation of Resistive Random Access Memory With Enhanced Endurance at 14 K
Mamidala, Saketh Ram LU
; Mamidala, Karthik Ram
LU
and Wernersson, Lars-Erik
LU
(2024)
In IEEE Transactions on Electron Devices
- Contribution to journal › Article
-
Mark
TFET Circuit Configurations Operating below 60 mV/dec
Rangasamy, Gautham LU ; Zhu, Zhongyunshen LU
; Fhager, Lars Ohlsson
LU
and Wernersson, Lars Erik
LU
(2024)
In IEEE Transactions on Nanotechnology
23.
p.441-447
- Contribution to journal › Article
- 2023
-
Mark
Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor Performance
Athle, Robin LU and Borg, Mattias LU
(2023)
In IEEE Transactions on Electron Devices
70(3).
p.1412-1416
- Contribution to journal › Article
-
Mark
Cryogenic Characteristics of InGaAs MOSFET
Sodergren, L. LU ; Olausson, P. LU and Lind, E. LU
(2023)
In IEEE Transactions on Electron Devices
70(3).
p.1226-1230
- Contribution to journal › Article