Nano Electronics
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- 2017
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Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
- Contribution to journal › Article
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Mark
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
(2017) In IEEE Electron Device Letters
- Contribution to journal › Letter
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Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
- Contribution to journal › Article
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Mark
Properties of III-V nanowires : MOSFETs and TunnelFETs
(2017) 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 p.99-100
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Junctionless tri-gate InGaAs MOSFETs
- Contribution to journal › Article
-
Mark
The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
(2017) 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 2017-September. p.273-276
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical III-V Nanowire Tunnel Field-Effect Transistor
(2017)
- Thesis › Doctoral thesis (compilation)
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Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
(2017) In Nano Letters
- Contribution to journal › Letter
- 2016
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
- Contribution to journal › Letter
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Mark
Autonomy in PhD-education – Supervising for Independence
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
