Lars-Erik Wernersson

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2022
Mark As-deposited ferroelectric HZO on a III–V semiconductor
Andersen, André ^LU ; Persson, Anton E. O. ^LU and Wernersson, Lars-erik ^LU (2022) In Applied Physics Letters 121(1). p.012901-012901
- Contribution to journal › Article
Mark Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
Löfstrand, Anette ^LU ; Jafari Jam, Reza ^LU ; Svensson, Johannes ^LU ; Jönsson, Adam ^LU ; Menon, Heera ^LU ; Jacobsson, Daniel ; Wernersson, Lars-Erik ^LU and Maximov, Ivan ^LU (2022) In Advanced Electronic Materials 8(9).
- Contribution to journal › Article
Mark Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
Zhu, Zhongyunshen ^LU ; Jönsson, Adam ^LU ; Liu, Yen Po ^LU ; Svensson, Johannes ^LU ; Timm, Rainer ^LU and Wernersson, Lars Erik ^LU (2022) In ACS Applied Electronic Materials 4(1). p.531-538
- Contribution to journal › Article
Mark Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
Liu, Yen-Po ^LU ; Yngman, Sofie ^LU ; Troian, Andrea ^LU ; D Acunto, Giulio ^LU ; Jönsson, Adam ^LU ; Svensson, Johannes ^LU ; Mikkelsen, Anders ^LU ; Wernersson, Lars-Erik ^LU and Timm, Rainer ^LU (2022) In Applied Surface Science
- Contribution to journal › Article
Mark Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
Zhu, Zhongyunshen ^LU ; Svensson, Johannes ^LU ; Jönsson, Adam ^LU and Wernersson, Lars Erik ^LU (2022) In Nanotechnology 33(7).
- Contribution to journal › Article
Mark Ferroelectric-Antiferroelectric Transition of Hf_{1- x}Zr_xO₂on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf_0.2Zr_0.8O₂
Dahlberg, Hannes ^LU ; Persson, Anton E.O. ^LU ; Athle, Robin ^LU and Wernersson, Lars Erik ^LU (2022) In ACS Applied Electronic Materials 4(12). p.6357-6363
- Contribution to journal › Article
2021
Mark Millimeter-Wave Vertical III-V Nanowire MOSFET Device-To-Circuit Co-Design
Andric, Stefan ^LU ; Ohlsson Fhager, Lars ^LU and Wernersson, Lars Erik ^LU (2021) In IEEE Transactions on Nanotechnology 20. p.434-440
- Contribution to journal › Article
Mark Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation
Persson, Karl-Magnus ^LU ; Mamidala, Saketh, Ram ^LU and Wernersson, Lars-Erik ^LU (2021) In IEEE Journal of the Electron Devices Society 9. p.564-569
- Contribution to journal › Article
Mark Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>10⁶) Low Voltage ITO/HfO₂ RRAMs for Future 3D Integration
Mamidala, Saketh, Ram ^LU ; Persson, Karl-Magnus ^LU and Wernersson, Lars-Erik ^LU (2021) 2021 Device Research Conference (DRC)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO₂ RRAM via TiN bottom electrode and interface engineering
Yong, Zhihua ^LU ; Persson, Karl-Magnus ^LU ; Mamidala, Saketh, Ram ^LU ; D Acunto, Giulio ^LU ; Liu, Yi ^LU ; Benter, Sandra ^LU ; Pan, Jisheng ; Li, Zheshen ; Borg, Mattias ^LU and Mikkelsen, Anders ^LU , et al. (2021) In Applied Surface Science 551.
- Contribution to journal › Article

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