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2016
Mark InAs nanowire GAA n-MOSFETs with 12-15 nm diameter
Vasen, T. ; Ramvall, P. ; Afzalian, A. ; Thelander, C. ^LU ; Dick, K. A. ^LU ; Holland, M. ; Doornbos, G. ; Wang, S. W. ; Oxland, R. and Vellianitis, G. , et al. (2016) 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 2016-September.
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Vertical III-V nanowire MOSFETs, TFETs, and CMOS-Gates on Si : Processing in 3D
Wernersson, Lars Erik ^LU (2016) 74th Annual Device Research Conference, DRC 2016 2016-August.
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
Berg, Martin ^LU ; Kilpi, Olli-Pekka ^LU ; Persson, Karl-Magnus ^LU ; Svensson, Johannes ^LU ; Hellenbrand, Markus ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) In IEEE Electron Device Letters 37(8). p.966-969
- Contribution to journal › Letter
Mark Effect of Gate Voltage Stress on InGaAs MOSFET with HfO₂ or Al₂O₃ Dielectric
Roll, Guntrade ^LU ; Mo, Jiongjiong ^LU ; Lind, Erik ^LU ; Johansson, Sofia ^LU and Wernersson, Lars Erik ^LU (2016) In IEEE Transactions on Device and Materials Reliability 16(2). p.112-116
- Contribution to journal › Article
Mark 3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors
Wu, Jun ^LU and Wernersson, Lars Erik ^LU (2016) In IEEE Electron Device Letters 37(7). p.851-854
- Contribution to journal › Article
Mark Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
Wu, Jun ^LU ; Babadi, Aein Shiri ^LU ; Jacobsson, Daniel ^LU ; Colvin, Jovana ^LU ; Yngman, Sofie ^LU ; Timm, Rainer ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2016) In Nano Letters 16(4). p.2418-2425
- Contribution to journal › Article
Mark Single suspended InGaAs nanowire MOSFETs
Zota, Cezar B. ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2016) In Technical Digest - International Electron Devices Meeting, IEDM p.1-31
- Contribution to journal › Article
Mark Amplifier Design Using Vertical InAs Nanowire MOSFETs
Jansson, Kristofer ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2016) In IEEE Transactions on Electron Devices 63(6). p.2353-2359
- Contribution to journal › Article
Mark ZrO₂ and HfO₂ dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
Shiri Babadi, Aein ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2016) In Applied Physics Letters 108(13).
- Contribution to journal › Article
Mark Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Hellenbrand, Markus ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) In IEEE Electron Device Letters 37(5). p.549-552
- Contribution to journal › Letter

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