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- 2017
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
-
Mark
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
(
- Contribution to journal › Article
- 2016
-
Mark
Electrical Characterization of III-V Nanostructure
2016)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Demonstration of Sn-seeded GaSb homo- and GaAs-GaSb heterostructural nanowires
(
- Contribution to journal › Article
- 2015
-
Mark
III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si
(
- Contribution to journal › Article
- 2014
-
Mark
High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices
(
- Contribution to journal › Article
- 2013
-
Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
(
- Contribution to journal › Article
- 2012
-
Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Antimonide Heterostructure Nanowires - Growth, Physics and Devices
2012)(
- Thesis › Doctoral thesis (compilation)