Nano Electronics
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- 2017
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Mark
Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
(2017) Compound Semiconductor Week 2017
- Contribution to conference › Paper, not in proceeding
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Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
(2017) In Nano Letters
- Contribution to journal › Letter
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Mark
First InGaAs lateral nanowire MOSFET RF noise measurements and model
(2017) 75th Annual Device Research Conference, DRC 2017
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Record performance for junctionless transistors in InGaAs MOSFETs
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical III-V Nanowire Tunnel Field-Effect Transistor
(2017)
- Thesis › Doctoral thesis (compilation)
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Mark
Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
(2017) p.38-41
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
(2017) In IEEE Electron Device Letters
- Contribution to journal › Letter
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Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
- Contribution to journal › Article
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Mark
Junctionless tri-gate InGaAs MOSFETs
- Contribution to journal › Article
