Nano Electronics
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- 2017
-
Mark
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
(
- Contribution to journal › Letter
-
Mark
III-V MOSFETs for High-Frequency and Digital Applications
2017)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
-
Mark
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InGaAs tri-gate MOSFETs with record on-current
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A transmission line model for co-designed slot-coupled dielectric resonator antennas
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2016
-
Mark
Autonomy in PhD-education – Supervising for Independence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
(
- Contribution to journal › Letter
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
(
- Contribution to journal › Letter
- 2015
-
Mark
Vertical InAs/GaSb Nanowire Axial TFETs Integrated on Si-substrates
2015) Compound Semiconductor Week 2015(
- Contribution to conference › Paper, not in proceeding