Nano Electronics
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- 2020
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Mark
Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
- Contribution to journal › Article
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Mark
Vertical nanowire III–V MOSFETs with improved high-frequency gain
- Contribution to journal › Article
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Mark
Electrical Characterisation of III-V Nanowire MOSFETs
(2020) In Series of Licentiate and Doctoral Theses
- Thesis › Doctoral thesis (compilation)
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Mark
Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
- Contribution to journal › Article
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Mark
A method for estimating defects in ferroelectric thin film MOSCAPs
- Contribution to journal › Article
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Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
- Contribution to journal › Article
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Mark
Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices
- Contribution to journal › Article
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Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
- Contribution to journal › Article
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Mark
Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving Smin= 32 mV/dec and gm/ID= 100 V-1
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
- Contribution to journal › Article
