Lars-Erik Wernersson
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- 2016
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Mark
Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
- Contribution to journal › Article
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Mark
Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric
- Contribution to journal › Article
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Mark
3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors
- Contribution to journal › Article
-
Mark
Amplifier Design Using Vertical InAs Nanowire MOSFETs
- Contribution to journal › Article
-
Mark
ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
- Contribution to journal › Article
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Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
- Contribution to journal › Letter
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Mark
Single suspended InGaAs nanowire MOSFETs
- Contribution to journal › Article
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Mark
InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz
- Contribution to journal › Article
-
Mark
High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
- Contribution to journal › Article
