Lars-Erik Wernersson
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- 2022
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Mark
Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
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- Contribution to journal › Article
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Mark
A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Ferroelectric-Antiferroelectric Transition of Hf1- xZrxO2on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2
(
- Contribution to journal › Article
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Mark
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
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- Contribution to journal › Article
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Mark
Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
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- Contribution to journal › Article
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Mark
The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties
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- Contribution to journal › Article
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Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
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- Contribution to journal › Article
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Mark
Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
2022) In Applied Surface Science(
- Contribution to journal › Article
- 2021
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Mark
Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation
2021) 15th European Microwave Integrated Circuits Conference, EuMIC 2020 In EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference p.85-88(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
(
- Contribution to journal › Article