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- 2019
-
Mark
Fabrication of Tunnel FETs demonstrating sub-thermal subthreshold slope
2019) 21th International Vacuum Congress(
- Contribution to conference › Abstract
- 2018
-
Mark
Codesign of Compact III-V Millimeter-Wave Wavelet Transmitters with On-Chip Antennas
(
- Contribution to journal › Article
-
Mark
CMOS Integration Based on All-III-V Materials
2018) Swedish Microwave Days 2018(
- Contribution to conference › Abstract
-
Mark
Vertical, High-Performance 12 nm diameter InAs Nanowire MOSFETs on Si using an all III-V CMOS process
2018) Compound Semiconductor Week 2018(
- Contribution to conference › Abstract
-
Mark
RF Characterisation of Vertical III-V Nanowire Tunnel FETs
2018) Swedish Microwave Days 2018(
- Contribution to conference › Paper, not in proceeding
-
Mark
Impact of Non-idealities on the Performance of InAs/(In)GaAsSb/GaSb Tunnel FETs
2018) In Composants nanoélectroniques(
- Contribution to journal › Article
-
Mark
Fabrication of Tunnel Field-Effect Transistors
2018) Swedish Microwave Days 2018(
- Contribution to conference › Paper, not in proceeding
-
Mark
Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Capacitance Measurements in Vertical III-V Nanowire TFETs
(
- Contribution to journal › Letter
- 2017
-
Mark
Impact of doping and diameter on the electrical properties of GaSb nanowires
(
- Contribution to journal › Article
-
Mark
Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
2017) Compound Semiconductor Week 2017(
- Contribution to conference › Paper, not in proceeding
-
Mark
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
2017) In IEEE Electron Device Letters(
- Contribution to journal › Letter
-
Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
-
Mark
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
(
- Contribution to journal › Letter
-
Mark
Properties of III-V nanowires : MOSFETs and TunnelFETs
2017) 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 p.99-100(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Junctionless tri-gate InGaAs MOSFETs
(
- Contribution to journal › Article
-
Mark
The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
2017) 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 2017-September. p.273-276(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2016
-
Mark
Ballistic modeling of InAs nanowire transistors
(
- Contribution to journal › Article
-
Mark
InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding