Johannes Svensson
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- 2020
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Mark
Vertical nanowire III–V MOSFETs with improved high-frequency gain
(
- Contribution to journal › Article
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Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
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Mark
Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
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Mark
Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
(
- Contribution to journal › Article
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Mark
Compressively-strained GaSb nanowires with core-shell heterostructures
(
- Contribution to journal › Article
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Mark
Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth
(
- Contribution to journal › Article
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Mark
A method for estimating defects in ferroelectric thin film MOSCAPs
(
- Contribution to journal › Article
- 2019
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Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article
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Mark
Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding