Lars-Erik Wernersson
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- 2022
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Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
(
- Contribution to journal › Article
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Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
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- Contribution to journal › Article
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Mark
As-deposited ferroelectric HZO on a III–V semiconductor
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- Contribution to journal › Article
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Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
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- Contribution to journal › Article
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Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
(
- Contribution to journal › Article
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Mark
Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
2022) In Applied Surface Science(
- Contribution to journal › Article
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Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
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- Contribution to journal › Article
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Mark
Ferroelectric-Antiferroelectric Transition of Hf1- xZrxO2on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2
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- Contribution to journal › Article
- 2021
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Mark
Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation
2021) 15th European Microwave Integrated Circuits Conference, EuMIC 2020 In EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference p.85-88(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
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- Contribution to journal › Article