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- 2010
-
Mark
III-V Nanowires-Extending a Narrowing Road
(
- Contribution to journal › Article
-
Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
(
- Contribution to journal › Article
-
Mark
Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
(
- Contribution to journal › Article
-
Mark
Modelling and optimization of III/V transistors with matrices of nanowires
(
- Contribution to journal › Article
-
Mark
Tunneling-based devices and circuits
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Admittance Matching of 60 GHz Rectangular Dielectric Resonator Antennas for Integrated Impulse Radio
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Analysis of InAs/HfO2 nanowire CV characteristics
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding
-
Mark
High-k oxides on (100), (111)A and (111)B InAs substrates
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding
-
Mark
A 12.5 Gpulses/s 60 GHz bi-phase wavelet generator
2010) 34th International European Workshop on Compound Semiconductor Devices and Integrated Circuits(
- Contribution to conference › Abstract
-
Mark
Oscillator for 60 GHz Super Regenerative Receiver
(
- Contribution to journal › Published meeting abstract
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Contribution to journal › Published meeting abstract
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
- 2009
-
Mark
MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Gated tunnel diode in oscillator applications with high frequency tuning
(
- Contribution to journal › Article
-
Mark
20 GHz gated tunnel diode based UWB pulse generator
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
20 GHz Wavelet Generator Using a Gated Tunnel Diode
(
- Contribution to journal › Article
-
Mark
Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Deposition of HfO2 on InAs by atomic-layer deposition
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
60 GHz Ultra-Wideband Impulse Radio Transmitter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Design and manufacturing of a dielectric resonator antenna for impulse radio at 60 GHz
(
- Contribution to conference › Paper, not in proceeding
-
Mark
Fabrication Tehnology for RF Cirquit Implementation of Vertical III-V MOSFETs
2009) Swedish System-on-Chip Conference, SSoCC '09(
- Contribution to conference › Abstract
- 2008
-
Mark
Drive current and threshold voltage control in vertical InAs wrap-gate transistors
(
- Contribution to journal › Article
-
Mark
InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.042017-042017(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
GaAs/GaSb nanowire heterostructures grown by MOVPE
(
- Contribution to journal › Article
-
Mark
Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
(
- Contribution to journal › Article
-
Mark
Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
(
- Contribution to journal › Debate/Note/Editorial
-
Mark
Gated tunnel diode pulse generator
2008) GigaHertz Symposium In Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology p.37-37(
- Contribution to journal › Published meeting abstract
-
Mark
Guest Editorial Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
(
- Contribution to journal › Debate/Note/Editorial
-
Mark
Development of a Vertical Wrap-Gated InAs FET
(
- Contribution to journal › Article
-
Mark
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
(
- Contribution to journal › Article
-
Mark
Characterization of GaSb nanowires grown by MOVPE
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Heterogeneous integration of InAs on W/GaAs by MOVPE
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.042043-042043(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
III/V Nanowire FETs for CMOS?
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Heterostructure Barriers in Wrap Gated Nanowire FETs
(
- Contribution to journal › Article
- 2007
-
Mark
Nanowire field-effect transistor
(
- Contribution to journal › Article
-
Mark
InAs WRAP-gate nanowire transistors
2007) IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials p.527-529(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High Tuning-Range VCO Using a Gated Tunnel Diode
2007) 2007 International Conference on Solid State Materials and Devices In [Publication information missing] p.798-799(
- Contribution to journal › Published meeting abstract
-
Mark
High-performance InAs NW MISFETs
2007) 8th Sweden-Japan Intl Workshop on Quantum Nanoelectronics, 2007(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electron microscopy studies of nanowires
2007) Aminoff Symp: Carbon nanotubes - with an eye on the nanoworld, 2007(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Pulse Generator with Gated Tunnel Diode
2007) Swedish System-on-Chip Conference 2007 (SSoCC’07)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2006
-
Mark
InAsP/InAs nanowire heterostructure field effect transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical high mobility wrap-gated InAs nanowire transistors
2006) 63rd Annual Device Res Conf, Santa Barbara, Ca, USA (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical high-mobility wrap-gated InAs nanowire transistor
(
- Contribution to journal › Article
-
Mark
Vertical InAs nanowire wrap-gate FETs
2006) Semiconductor Nanowires Symposium, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs wrap-gate FETs
2006) Semiconductor Nanowires Symposium, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Nanowire transistors: fabrication, performance and applications
2006) Intl Workshop Challenges and Opportunities in Nanoarchitectures, Halmstad, Sweden (2006), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Nanowire field effect transistor
2006) Intl Conf on Solid State Devices and Materials, Kanagawa, Japan (2006), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2005
-
Mark
A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation
(
- Contribution to journal › Article
-
Mark
Vertical high mobility wrap-gated InAs nanowire transistor
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Wrap-gated InAs nanowire field-effect transistor
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
MOVPE of InAs epitaxial overgrowth of W masks
2005) 12 Intl Conf on Narrow Gap Semiconductors, Toulouse, France (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs epitaxial lateral overgrowth of W masks
(
- Contribution to journal › Article
-
Mark
Gated tunnel diodes in nanoelectronic pulse generators
2005) Sweden-Japan Intl Workshop on Quantum Nano-Physics and Electronics, (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2004
-
Mark
SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
(
- Contribution to journal › Article
-
Mark
Nanoelectronic pulse generators based on gated resonant tunnelling diodes
(
- Contribution to journal › Article
-
Mark
Resonant tunneling permeable base transistor based pulsed oscillator
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Nanoelectronic pulse generators for UWB applications
2004) 1st Sweden-Korea Nano-Workshop, Seoul, Korea (2004), invvited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Resonant tunneling permeable base transistor based pulsed oscillator
2004) Intl Semicond Dev Res Symp, (2004)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Design of resonant tunneling permeable base transistors
2004) 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings p.158-163(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Resonant tunneling permeable base transistors with high transconductance
(
- Contribution to journal › Article
-
Mark
3D metal-semiconductor devices and other nanoelectronic devices
2004) NSF/SSF Workshop on Nanoscience and Nanotechnology, 2004(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2003
-
Mark
InP hot electron transistors with a buried metal gate
(
- Contribution to journal › Article
-
Mark
Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
(
- Contribution to journal › Article
-
Mark
Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures
(
- Contribution to journal › Article
-
Mark
Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots
(
- Contribution to journal › Article
-
Mark
Highly functional tunnelling devices integrated in 3D
(
- Contribution to journal › Article
-
Mark
Tunneling spectroscopy of a quantum dot through a single impurity
(
- Contribution to journal › Article
-
Mark
Resonant Tunneling Permeable Base Transistor for RF applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2002
-
Mark
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
(
- Contribution to journal › Article
-
Mark
Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
(
- Contribution to journal › Article
-
Mark
Three-dimensional integrated resonant tunneling transistor with multiple peaks
(
- Contribution to journal › Article
-
Mark
Nanoscale tungsten aerosol particles embedded in GaAs
(
- Contribution to journal › Article
-
Mark
Carrier dynamics around nano-scale Schottky contacts: a femtosecond near-field study
(
- Contribution to journal › Article
-
Mark
A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes
(
- Contribution to journal › Article
-
Mark
Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
(
- Contribution to journal › Article
-
Mark
Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
(
- Contribution to journal › Article
-
Mark
Nano-scale Schottky contacts: ultrafast drift-diffusion dynamics studied in the optical near field
(
- Contribution to journal › Article
-
Mark
Designed emitter states in resonant tunneling through quantum dots
(
- Contribution to journal › Article
-
Mark
Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
(
- Contribution to journal › Article
-
Mark
Coupling between lateral modes in a vertical resonant tunneling structure
(
- Contribution to journal › Article
-
Mark
Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Circuits and devices with integrated VFETs and RTDs
2002) p.205-208(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Stacking of heterostructures and metallic elements for a submicron resonant tunneling transistor
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Carrier and field dynamics around nanoscale Schottky contacts investigated by ultrafast near-field optics
(
- Contribution to journal › Article
-
Mark
Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide
(
- Contribution to journal › Article
-
Mark
A resonant tunneling permeable base transistor with Al-free tunneling barriers
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor
(
- Contribution to journal › Article
- 1998
-
Mark
Three-Dimensional Metal-Semiconductor Heterostructures for Device Applications
1998)(
- Thesis › Doctoral thesis (compilation)
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