Nano Electronics
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- 2023
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Mark
Vertical III-V Nanowires For In-Memory Computing
2023)(
- Thesis › Doctoral thesis (compilation)
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Mark
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
(
- Contribution to journal › Article
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Mark
Infrared Photodetectors based on InSb and InAs Nanostructures via Heterogeneous Integration-Rapid Melt Growth and Template Assisted Selective Epitaxy
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
(
- Contribution to journal › Article
-
Mark
Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2022
-
Mark
Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
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- Contribution to journal › Article
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Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
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- Contribution to journal › Article
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Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
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- Contribution to journal › Article
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Mark
Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
(
- Contribution to journal › Article
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Mark
Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
(
- Contribution to journal › Article