Nano Electronics
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- 2023
-
Mark
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
(
- Contribution to journal › Article
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Mark
High Current Density Vertical Nanowire TFETs With I₆₀ > 1
μ
A/
μ
m
(
- Contribution to journal › Article
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Mark
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
(
- Contribution to journal › Article
-
Mark
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
2023) 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 In IEEE International Integrated Reliability Workshop Final Report(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators
2023) In Advanced Intelligent Systems(
- Contribution to journal › Article
- 2022
-
Mark
Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
(
- Contribution to journal › Article
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Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
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Mark
Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
2022) In Applied Surface Science(
- Contribution to journal › Article
-
Mark
Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
(
- Contribution to journal › Article
-
Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
(
- Contribution to journal › Article