Nano Electronics
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- 2022
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Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
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- Contribution to journal › Article
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The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties
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- Contribution to journal › Article
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A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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A 5.8-GHz Rectifier Using Diode-Connected MESFET for Space Solar Power Satellite System
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- Contribution to journal › Article
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Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
2022) In Applied Surface Science(
- Contribution to journal › Article
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Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
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- Contribution to journal › Article
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Advantage of Binary Stochastic synapses for hardware Spiking Neural Networks with realistic memristors
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- Contribution to journal › Article
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Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
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- Contribution to journal › Article
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Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
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- Contribution to journal › Article
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Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
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- Contribution to journal › Article