Solid State Physics
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- 2011
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Mark
Design of RF Properties for Vertical Nanowire MOSFETs
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- Contribution to journal › Article
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Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
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- Contribution to journal › Article
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Mark
Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
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- Contribution to journal › Article
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Mark
Remote Excitation Polarization-Dependent Surface Photochemical Reaction by Plasmonic Waveguide
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- Contribution to journal › Article
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Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
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- Contribution to journal › Article
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Mark
Degenerate p-doping of InP nanowires for large area tunnel diodes
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- Contribution to journal › Article
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Mark
GaSb nanowire single-hole transistor
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- Contribution to journal › Article
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Mark
Generation and characterization of stable, highly concentrated titanium dioxide nanoparticle aerosols for rodent inhalation studies
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- Contribution to journal › Article
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Mark
Thermal resistance of a nanoscale point contact to an indium arsenide nanowire
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- Contribution to journal › Article